VLSI Design

VLSI Design / 1998 / Article
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Computational Electronics

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Volume 8 |Article ID 046212 | https://doi.org/10.1155/1998/46212

A. Marrocco, Ph. Montarnal, "Bi-Dimensional Simulation of the Simplified Hydrodynamic and Energy-Transport Models Heter junction Semiconductors Devices Using Mixed Finite Elements", VLSI Design, vol. 8, Article ID 046212, 7 pages, 1998. https://doi.org/10.1155/1998/46212

Bi-Dimensional Simulation of the Simplified Hydrodynamic and Energy-Transport Models Heter junction Semiconductors Devices Using Mixed Finite Elements

Abstract

We study the application of the mixed finite elements method (MFE) for the bidimensional simulation of the simplified hydrodynamic and energy-transport models. The two main points are the use of entropic variables which gives a symmetric positive definite problem and a coupled computation of the equations for electrons which requires a generalization of the MFE method for vector valued problems. We give numerical results on JFET and HEMT devices.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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