VLSI Design

VLSI Design / 1998 / Article

Open Access

Volume 6 |Article ID 46360 | 5 pages | https://doi.org/10.1155/1998/46360

Quantum Transport Simulation of the DOS function, Self-Consistent Fields and Mobility in MOS Inversion Layers

Abstract

We describe a simulation of the self-consistent fields and mobility in (100) Si-inversion layers for arbitrary inversion charge densities and temperatures. A nonequilibrium Green's functions formalism is employed for the state broadening and conductivity. The subband structure of the inversion layer electrons is calculated self-consistently by simultaneously solving the Schrödinger, Poisson and Dyson equations. The self-energy contributions from the various scattering mechanisms are calculated within the self-consistent Born approximation. Screening is treated within RPA. Simulation results suggest that the proposed theoretical model gives mobilities which are in excellent agreement with the experimental data.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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