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VLSI Design
Volume 6, Issue 1-4, Pages 223-237
http://dx.doi.org/10.1155/1998/48951

Recent Advances in Device Simulation Using Standard Transport Models

1Dipartimento di Elettronica, Informatica e Sistemistica, Università di Bologna, Viale Risorgimento, Bologna 2 - 40136, Italy
2NVM Process Development, SGS-Thomson Microelectronics, Via Olivetti, Agrate Brianza 2 - 20041, Italy

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

G. Baccarani, M. Rudan, M. Lorenzini, and C. Sala, “Recent Advances in Device Simulation Using Standard Transport Models,” VLSI Design, vol. 6, no. 1-4, pp. 223-237, 1998. https://doi.org/10.1155/1998/48951.