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B. Neinhüs, S. Decker, P. Graf, F. M. Bufler, B. Meinerzhagen, "Consistent Hydrodynamic and Monte-Carlo Simulation of SiGe HBTs Based on Table Models the Relaxation Times", VLSI Design, vol. 8, Article ID 049783, 5 pages, 1998. https://doi.org/10.1155/1998/49783
Consistent Hydrodynamic and Monte-Carlo Simulation of SiGe HBTs Based on Table Models the Relaxation Times
Good agreement between a hydrodynamic and a Monte-Carlo device model is demonstrated in this paper for an advanced SiGe Heterojunction Bipolar Transistor. This result is based on two principles: 1) Extraction (from the Monte-Carlo bulk model under homogeneous conditions) of the relaxation times τ at discrete points of the parameter space spanned by the Ge-content x, doping density N, carrier temperature and lattice temperature ) Modeling of the relaxation times by splines.
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