VLSI Design

VLSI Design / 1998 / Article
Special Issue

Computational Electronics

View this Special Issue

Open Access

Volume 8 |Article ID 49783 | 5 pages | https://doi.org/10.1155/1998/49783

Consistent Hydrodynamic and Monte-Carlo Simulation of SiGe HBTs Based on Table Models the Relaxation Times

Abstract

Good agreement between a hydrodynamic and a Monte-Carlo device model is demonstrated in this paper for an advanced SiGe Heterojunction Bipolar Transistor. This result is based on two principles: 1) Extraction (from the Monte-Carlo bulk model under homogeneous conditions) of the relaxation times τ at discrete points of the parameter space spanned by the Ge-content x, doping density N, carrier temperature TC and lattice temperature TL.2) Modeling of the relaxation times τ(x,TC,TL) by splines.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


More related articles

0 Views | 0 Downloads | 0 Citations
 PDF  Download Citation  Citation
 Order printed copiesOrder

Related articles

We are committed to sharing findings related to COVID-19 as quickly and safely as possible. Any author submitting a COVID-19 paper should notify us at help@hindawi.com to ensure their research is fast-tracked and made available on a preprint server as soon as possible. We will be providing unlimited waivers of publication charges for accepted articles related to COVID-19. Sign up here as a reviewer to help fast-track new submissions.