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VLSI Design
Volume 6 (1998), Issue 1-4, Pages 127-130

Quadrilateral Finite Element Monte Carlo Simulation of Complex Shape Compound FETs

Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12-8QQ, UK

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The complex recess and gate shape of modem compound FETs greatly affect the device parasitics and therefore impose the need for proper description of the device geometry and surface conditions in any practical device simulations. In this paper we describe a new Monte Carlo (MC) module incorporated in our Heterojunction 2D Finite element FET simulator H2F [1]. The module combines realistic quadrilateral finite-element description of the device geometry with realistic particle simulation of the non-equilibrium hot carrier transport in short recess gate compound FETs. A Single Programme Multiple Data (SPMD) parallel approach makes it possible to use our MC simulator for practical design work, generating the necessary I-V characteristics in parallel. The capabilities of the finite element MC module are illustrated in example simulations of a 200nm pseudomorphic HEMT fabricated in the Nanoelectronics Research Centre of Glasgow University.