VLSI Design

VLSI Design / 1998 / Article

Open Access

Volume 6 |Article ID 052624 | https://doi.org/10.1155/1998/52624

Clinton R. Arokianathan, Asen Asenov, John H. Davies, "A New Approach based on Brownian Motion for the Simulation of Ultra-Small Semiconductor Devices", VLSI Design, vol. 6, Article ID 052624, 4 pages, 1998. https://doi.org/10.1155/1998/52624

A New Approach based on Brownian Motion for the Simulation of Ultra-Small Semiconductor Devices

Abstract

We present a new approach to the simulation of ultra-small semiconductor devices based on Brownian motion of the carriers described by the Langevin equation. It follows the trajectories of individual particles in real space but does not require the computational effort of a full Monte Carlo simulation. This method is particulary useful for modeling very small devices where individual impurities and carries must be considered as discrete entities, and where a molecular dynamics approach is used in a full-scale three-dimensional simulation. We show that this method gives the correct Maxwell-Boltzmann distribution and that it provides a good description of transport through a short diode.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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