VLSI Design

VLSI Design / 1998 / Article

Open Access

Volume 6 |Article ID 057195 | https://doi.org/10.1155/1998/57195

Wenchao Liang, Neil Goldsman, Isaak Mayergoyz, "A New Self-Consistent 2D Device Simulator Based on Deterministic Solution of the Boltzmann, Poisson and Hole-Continuity Equations", VLSI Design, vol. 6, Article ID 057195, 6 pages, 1998. https://doi.org/10.1155/1998/57195

A New Self-Consistent 2D Device Simulator Based on Deterministic Solution of the Boltzmann, Poisson and Hole-Continuity Equations

Abstract

LDD MOSFET simulation is performed by directly solving the Boltzmann Transport Equation for electrons, the Hole-Current Continuity Equation and the Poisson Equation self-consistently. The spherical harmonic expansion method is employed along with a new Scharfetter-Gummel like discretization of the Boltzmann equation. The solution efficiently provides the distribution function, electrostatic potential, and the hole concentration for the entire 2-D MOSFET.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


More related articles

 PDF Download Citation Citation
 Order printed copiesOrder
Views81
Downloads735
Citations