Table of Contents
VLSI Design
Volume 6, Issue 1-4, Pages 251-256

A New Self-Consistent 2D Device Simulator Based on Deterministic Solution of the Boltzmann, Poisson and Hole-Continuity Equations

Department of Electrical Engineering, University of Maryland, College Park 20742, MD, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


LDD MOSFET simulation is performed by directly solving the Boltzmann Transport Equation for electrons, the Hole-Current Continuity Equation and the Poisson Equation self-consistently. The spherical harmonic expansion method is employed along with a new Scharfetter-Gummel like discretization of the Boltzmann equation. The solution efficiently provides the distribution function, electrostatic potential, and the hole concentration for the entire 2-D MOSFET.