Daniel C. Kerr, Neil Goldsman, Isaak D. Mayergoyz, "Three-Dimensional Hydrodynamic Modeling of MOSFET Devices", VLSI Design, vol. 6, Article ID 060859, 5 pages, 1998. https://doi.org/10.1155/1998/60859
Three-Dimensional Hydrodynamic Modeling of MOSFET Devices
The hydrodynamic (HD) model of semiconductor devices is solved numerically in three-dimensions (3-D) for the MOSFET device. The numerical instabilities of the HD model are analyzed to develop a stable discretization. The formulation is stabilized by using a new, higher-order discretization for the relaxation-time approximation (RTA) term of the energy-balance (EB) equation. The developed formulation is used to model the MOSFET.
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