VLSI Design

VLSI Design / 1998 / Article

Open Access

Volume 6 |Article ID 60859 | 5 pages | https://doi.org/10.1155/1998/60859

Three-Dimensional Hydrodynamic Modeling of MOSFET Devices

Abstract

The hydrodynamic (HD) model of semiconductor devices is solved numerically in three-dimensions (3-D) for the MOSFET device. The numerical instabilities of the HD model are analyzed to develop a stable discretization. The formulation is stabilized by using a new, higher-order discretization for the relaxation-time approximation (RTA) term of the energy-balance (EB) equation. The developed formulation is used to model the MOSFET.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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