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VLSI Design
Volume 6, Issue 1-4, Pages 379-384
http://dx.doi.org/10.1155/1998/62125

Surface Evolution During Semiconductor Processing

1Logic & Analog Technologies Group, Motorola, Inc., Mesa, AZ 85202, USA
2Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-6206, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [4 citations]

The following is the list of published articles that have cited the current article.

  • Mo Bloomeld, S Soukane, Ts Cale, and Df Richards, “Modeling plasma processes in microelectronics,” Vacuum, vol. 59, no. 1, pp. 168–178, 2000. View at Publisher · View at Google Scholar
  • David F. Richards, Max O. Bloomfield, Suchira Sen, and Timothy S. Cale, “Extension velocities for level set based surface profile evolution,” Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 19, no. 4, pp. 1630, 2001. View at Publisher · View at Google Scholar
  • Yeon Ho Im, Max O. Bloomfield, Suchira Sen, and Timothy S. Cale, “Modeling Pattern Density Dependent Bump Formation in Copper Electrochemical Deposition,” Electrochemical and Solid-State Letters, vol. 6, no. 3, pp. C42, 2003. View at Publisher · View at Google Scholar
  • Z. Xiao Guo, Max O. Bloomfield, and S. Cale Timothy, “Grain-continuum modelling of material behaviour,” Multiscale materials modelling, pp. 148–188, 2007. View at Publisher · View at Google Scholar