VLSI Design

VLSI Design / 1998 / Article

Open Access

Volume 6 |Article ID 067849 | https://doi.org/10.1155/1998/67849

Gabriele F. Formicone, Dragica Vasileska, David K. Ferry, "2D Monte Carlo Simulation of Hole and Electron Transport in Strained Si", VLSI Design, vol. 6, Article ID 067849, 5 pages, 1998. https://doi.org/10.1155/1998/67849

2D Monte Carlo Simulation of Hole and Electron Transport in Strained Si

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Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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