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VLSI Design
Volume 6 (1998), Issue 1-4, Pages 167-171

2D Monte Carlo Simulation of Hole and Electron Transport in Strained Si

Center for Solid State Electronics Research, Arizona State University Tempe, 85287-6206, Az, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This article has no abstract.