Luigi Colalongo, Marina Valdinoci, Antonio Gnudi, Massimo Rudan, "Transient Analysis of Silicon Devices Using the Hydrodynamic Model", VLSI Design, vol. 6, Article ID 069105, 4 pages, 1998. https://doi.org/10.1155/1998/69105
Transient Analysis of Silicon Devices Using the Hydrodynamic Model
The analysis of the switching behaviour of submicron devices brings about the necessity of extending the solution of the hydrodynamic model to the transient case. The implementation of such model has been carried out and a few examples of simulation are presented here, showing the velocity-overshoot of a ballistic diode and the temperature spread in the drain region of a realistic MOS device.
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