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VLSI Design
Volume 6 (1998), Issue 1-4, Pages 283-286
http://dx.doi.org/10.1155/1998/69105

Transient Analysis of Silicon Devices Using the Hydrodynamic Model

Dipartimento di Elettronica, Informatica e Sistemistica, Università di Bologna, Viale Risorgimento 2, Bologna 40136, Italy

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The analysis of the switching behaviour of submicron devices brings about the necessity of extending the solution of the hydrodynamic model to the transient case. The implementation of such model has been carried out and a few examples of simulation are presented here, showing the velocity-overshoot of a ballistic diode and the temperature spread in the drain region of a realistic MOS device.