Table of Contents
VLSI Design
Volume 8, Issue 1-4, Pages 343-347

Simulation of Si-MOSFETs with the Mutation Operator Monte Carlo Method

1II. Phys. Inst., University of Köln, Zülpicher Str. 77, Köln D-50937, Germany
2Intel Corporation, RA1-309, 5200 N.E. Elam Young Parkway, Hillsboro, OR 97124-6497, USA
3Beckman Institute, University of Illinois at Urbana-Champaign, 405 N. Mathews Avenue, Urbana, IL 61801, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [1 citation]

The following is the list of published articles that have cited the current article.

  • J. Jakumeit, and U. Ravaioli, “Semiconductor transport simulation with the local iterative Monte Carlo technique,” IEEE Transactions on Electron Devices, vol. 48, no. 5, pp. 946–955, 2001. View at Publisher · View at Google Scholar