Abstract
We report the theoretical investigation of the phenomenon of the formation of patterns transverse to the tunneling current in resonant tunneling double-barrier heterostructures in the case of wide range of bistable voltages. In contrast to the case of the patterns in the structures with small region of bistability, for pronounced bistability electron lateral transport is strongly nonlocal. We performed numerical simulations of the stationary and mobile patterns using special variational procedure. Our results revealed that though the possible types of patterns remains the same as for the structures with small bistability region, their characteristics are modified considerably.