Table of Contents
VLSI Design
Volume 6, Issue 1-4, Pages 91-95

Topologically Rectangular Grids in the Parallel Simulation of Semiconductor Devices

Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow, Scotland G12 8QQ, UK

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [3 citations]

The following is the list of published articles that have cited the current article.

  • A. Asenov, A.R. Brown, and S. Roy, “Parallel semiconductor device simulation: from power to 'atomistic' devices,” 1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116), pp. 58–61, . View at Publisher · View at Google Scholar
  • Barker, Brown, and Asenov, “3D parallel finite element simulation of in-cell breakdown in lateral-channel IGBTs,” VLSI Design, vol. 8, no. 1-4, pp. 99–103, 1998. View at Publisher · View at Google Scholar
  • Donna A. Calhoun, Christiane Helzel, and Randall J. LeVeque, “Logically Rectangular Grids and Finite Volume Methods for PDEs in Circular and Spherical Domains,” SIAM Review, vol. 50, no. 4, pp. 723–752, 2008. View at Publisher · View at Google Scholar