Table of Contents
VLSI Design
Volume 6, Issue 1-4, Pages 9-12
http://dx.doi.org/10.1155/1998/84503

A Generalized Tunneling Formula for Quantum Device Modeling

1Corporate R&D, Texas Instruments Incorporated, Dallas 75265, TX, USA
2Erik Jonsson School of Engineering and Computer Science, The University of Texas at Dallas, Richardson 75083, TX, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The generalized tunneling formula with the simple model for the broadening in the contacts gives surprisingly good results for the majority of RTD structures. It is just as fast as the standard coherent tunneling simulators and much more versatile. It is easily generalized to multi-band and multidimensional models. The multi-band generalization of the theory and the effect of the optical potential are described.