Table of Contents
VLSI Design
Volume 8, Issue 1-4, Pages 495-500
http://dx.doi.org/10.1155/1998/85608

Advantages of Semiconductor Device Simulator Combining Electromagnetic and Electron Transport Models

Department of Electrical Engineering, Telecommunications Research Center, Arizona State University, Tempe 85287-7206, AZ, USA

Received 18 May 1997; Accepted 10 July 1997

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

S. M. Sohel Imtiaz, Samir M. El-Ghazaly, and Robert O. Grondin, “Advantages of Semiconductor Device Simulator Combining Electromagnetic and Electron Transport Models,” VLSI Design, vol. 8, no. 1-4, pp. 495-500, 1998. https://doi.org/10.1155/1998/85608.