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VLSI Design
Volume 8 (1998), Issue 1-4, Pages 231-235

Self-Consistent Calculations of the Ground State and the Capacitance of a 3D Si/SiO2 Quantum Dot

1Swiss Federal Institute of Technology, Integrated Systems Laboratory, Gloriastrasse 35, Zürich CH-8092, Switzerland
2Beckman Institute for Advanced Science and Technology, University of Illinois, Urbana 61801, Illinois, USA

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We perform self-consistent electronic structure calculations in the framework of inhomogeneously and anisotropically scaled local density functional theory of a fully 3D modeled Si/SiO2 quantum dot. Electrons are laterally confined in the semiconductor/ oxide heterojunction by a metallic gate atop of the device. Total charge densities, total free energies, chemical potentials for different numbers of electrons in the dot, and the differential capacitances for various dot sizes are calculated. We observe shell filling effects in the differential capacitance. The magic-numbers are governed by the six valley bandstructure of silicon, which leads to four fold degenerated single particle levels in the dot.