VLSI Design

VLSI Design / 1998 / Article

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Volume 6 |Article ID 092921 | https://doi.org/10.1155/1998/92921

M. Macucci, K. Hess, "Corrections to the Capacitance between Two Electrodes Due to the Presence of Quantum Confined System", VLSI Design, vol. 6, Article ID 092921, 5 pages, 1998. https://doi.org/10.1155/1998/92921

Corrections to the Capacitance between Two Electrodes Due to the Presence of Quantum Confined System

Abstract

We have studied the capacitance between two parallel plates enclosing a quantum confined system and its dependence on the applied voltage. The concepts of capacitance and differential capacitance are discussed together with their applicability to systems characterized by single.electron tunneling. We determine the tunneling thresholds by means of a formalism based on the minimization of the system free energy and we retrieve, as a special case, Luryi's quantum capacitance formula. We apply our method to the study of an idealized system made up of a number of quantum dots with random size distributed according to a gaussian. Results are shown for different choices of the position of the dots between the plates and of the voltage span applied to perform the measurement of the differential capacitance.

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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