Table of Contents
VLSI Design
Volume 8, Issue 1-4, Pages 521-525

Hyperbolic Hydrodynamical Model of Carrier Transport in Semiconductors

1Dipartimento di Matematica, Università di Catania, viale A. Doria, Catania 6-95125, Italy
2Politecnico di Bari, sede di Taranto, Viale del Turismo, Taranto 8-74100, Italy
3Università dell'Aquila, Via Vetoio, loc. Coppito, L'Aquila 67100, Italy

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Angelo Marcello Anile, Vittorio Romano, and Giovanni Russo, “Hyperbolic Hydrodynamical Model of Carrier Transport in Semiconductors,” VLSI Design, vol. 8, no. 1-4, pp. 521-525, 1998.