Table of Contents
VLSI Design
Volume 8, Issue 1-4, Pages 527-532
http://dx.doi.org/10.1155/1998/97416

A Hydrodynamic Model for Transport in Semiconductors without Free Parameters

1Dipartimento di Fisica, Università di Catania, Corso Italia 57, Catania I-95129, Italy
2Dipartimento di Matematica, Università di Catania, Viale A.Doria 6, Catania I-95125, Italy

Copyright © 1998 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [4 citations]

The following is the list of published articles that have cited the current article.

  • Trovato, and Reggiani, “Maximum entropy principle for hydrodynamic transport in semiconductor devices,” Journal of Applied Physics, vol. 85, no. 8I, pp. 4050–4065, 1999. View at Publisher · View at Google Scholar
  • M. Trovato, and L. Reggiani, “Maximum entropy principle within a total energy scheme: Application to hot-carrier transport in semiconductors,” Physical Review B, vol. 61, no. 24, pp. 16667–16681, 2000. View at Publisher · View at Google Scholar
  • G. Mascali, and M. Trovato, “A non-linear determination of the distribution function of degenerate gases with an application to semiconductors,” Physica A: Statistical Mechanics and its Applications, vol. 310, no. 1-2, pp. 121–138, 2002. View at Publisher · View at Google Scholar
  • Massimo Trovato, “Hydrodynamic calculation for extended differential mobility in semiconductors,” Trends and Applications of Mathematics to Mechanics, pp. 269–285, 2005. View at Publisher · View at Google Scholar