Monte Carlo and hydrodynamic simulation of a one dimensional n⁺ – n – n⁺ silicon diode

Abstract

An improved closure relation - based on the entropy principle - is implemented in a Hydrodynamic model for electron transport. Steady-state electron transport in the “benchmark” n⁺ - n - n⁺ submicron silicon diode is simulated and the quality of the model is assessed by comparison with Monte Carlo results.