VLSI Design

VLSI Design / 2001 / Article
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Computional Electronics; Papers Presented at The Seventh International Workshop on Computional Electronics

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Volume 13 |Article ID 012624 | https://doi.org/10.1155/2001/12624

Peiji Zhao, H. L. Cui, D. Woolard, Fliex Buot, "Operation Principle of Resonant Tunneling THz Oscillator at Fixed Bias Voltages", VLSI Design, vol. 13, Article ID 012624, 5 pages, 2001. https://doi.org/10.1155/2001/12624

Operation Principle of Resonant Tunneling THz Oscillator at Fixed Bias Voltages


Based on time-dependent numerical simulation of an double barrier quantum well structure, a time-dependent energy coupling model is presented to account for the operational principle of a new kind of resonant tunneling THz oscillators.

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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