VLSI Design

VLSI Design / 2001 / Article
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Computional Electronics; Papers Presented at The Seventh International Workshop on Computional Electronics

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Volume 13 |Article ID 016196 | https://doi.org/10.1155/2001/16196

E. Amirante, G. Iannaccone, B. Pellegrini, "Three-dimensional Statistical Modeling of the Effects of the Random Distribution of Dopants in Deep Sub-micron nMOSFETs", VLSI Design, vol. 13, Article ID 016196, 5 pages, 2001. https://doi.org/10.1155/2001/16196

Three-dimensional Statistical Modeling of the Effects of the Random Distribution of Dopants in Deep Sub-micron nMOSFETs

Abstract

We have performed a three-dimensional statistical simulation of the threshold voltage distribution of deep submicron nMOSFETs, as a function of gate length, doping density, oxide thickness, based on a multigrid non-linear Poisson solver. We compare our results with statistical simulations presented in the literature, and show that essentially only the vertical distribution of dopants has an effect on the standard deviation of the threshold voltage.

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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