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VLSI Design
Volume 13, Issue 1-4, Pages 163-167
http://dx.doi.org/10.1155/2001/17268

Strain-Dependence of Electron Transport in Bulk Si and Deep-Submicron MOSFETs

1lnstitut für Integrierte Systeme, ETH Zürich, Zürich CH-8092, Switzerland
2Bell Laboratories, 600 Mountain Avenue, Murray Hill 07974, NJ, USA

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

F. M. Bufler, P. D. Yoder, and W. Fichtner, “Strain-Dependence of Electron Transport in Bulk Si and Deep-Submicron MOSFETs,” VLSI Design, vol. 13, no. 1-4, pp. 163-167, 2001. https://doi.org/10.1155/2001/17268.