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K. Kalna, A. Asenov, K. Elgaid, I. Thayne, "Scaling of pHEMTs to Decanano Dimensions", VLSI Design, vol. 13, Article ID 019759, 5 pages, 2001. https://doi.org/10.1155/2001/19759
Scaling of pHEMTs to Decanano Dimensions
The effect of scaling into deep decanano dimensions on the performance of pseudomorphic high electron mobility transistors (pHEMTs) is extensively studied using Monte Carlo simulations. The scaling of devices with gate lengths of 120, 70, 50 and 30nm is performed in both lateral and vertical directions. The devices exhibit a significant improvement in transconductance during scaling, even though external resistances become a limiting factor.
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