Abstract
The advective upstream splitting method (AUSM) developed for fluid dynamics problems has been applied to solving hydrodynamic semiconductor equations coupled with the Poisson’s equation. In the AUSM, the flux vectors of a fluid system are split into a convective component and a diffusive pressure component. Discretization of these two physically distinct fluxes is thus performed separately in AUSM. Application of the developed hydrodynamic AUSM to a GaAs MESFET with a gate length of 0.1 μm has demonstrated its simplicity, efficiency and effectiveness in dealing with the highly nonlinear hydrodynamic device system.