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VLSI Design
Volume 13, Issue 1-4, Pages 103-109
http://dx.doi.org/10.1155/2001/43502

3D Modelling of Fluctuation Effects in Highly Scaled VLSI Devices

Intel Technology CAD Division, 2200 Mission College Blvd., Santa Clara, CA, USA

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Thomas D. Linton Jr., Shaofeng Yu, and Reaz Shaheed, “3D Modelling of Fluctuation Effects in Highly Scaled VLSI Devices,” VLSI Design, vol. 13, no. 1-4, pp. 103-109, 2001. https://doi.org/10.1155/2001/43502.