Abstract
Focused Ion Beam MOSFETs (FIBMOS) demonstrate large enhancements in core device performance areas such as output resistance, hot electron reliability and voltage stability upon channel length or drain voltage variation. In this work, we describe an optimization technique for FIBMOS threshold voltage characterization using the 2D Silvaco ATLAS simulator. Both ATLAS and 2D Monte Carlo particle-based simulations were used to show that FIBMOS devices exhibit enhanced current drive capabilities when compared to normal MOSFETs. It was also found that the device performance is very much dependent upon the FIB implant profile. High and narrow doping of the FIB implant leads to high drain current and low hot carrier reliability, whereas low and wide doping gives rise to lower drain current and higher hot carrier reliability.