VLSI Design

VLSI Design / 2001 / Article
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Computional Electronics; Papers Presented at The Seventh International Workshop on Computional Electronics

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Open Access

Volume 13 |Article ID 047013 | https://doi.org/10.1155/2001/47013

F. Sacconi, F. Della Sala, A. Di Carlo, Paolo Lugli, "Microscopic Modeling of GaN-based Heterostructures", VLSI Design, vol. 13, Article ID 047013, 5 pages, 2001. https://doi.org/10.1155/2001/47013

Microscopic Modeling of GaN-based Heterostructures

Abstract

Self-consistent quantum modeling of GaN-based nanostructure are presented. The tight-binding approach is used to calculate optical properties while optimized effective mass approaches are used to obtain the output characteristics of GaN HEMT.

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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