VLSI Design

VLSI Design / 2001 / Article
Special Issue

Computional Electronics; Papers Presented at The Seventh International Workshop on Computional Electronics

View this Special Issue

Open Access

Volume 13 |Article ID 047013 | https://doi.org/10.1155/2001/47013

F. Sacconi, F. Della Sala, A. Di Carlo, Paolo Lugli, "Microscopic Modeling of GaN-based Heterostructures", VLSI Design, vol. 13, Article ID 047013, 5 pages, 2001. https://doi.org/10.1155/2001/47013

Microscopic Modeling of GaN-based Heterostructures


Self-consistent quantum modeling of GaN-based nanostructure are presented. The tight-binding approach is used to calculate optical properties while optimized effective mass approaches are used to obtain the output characteristics of GaN HEMT.

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

More related articles

 PDF Download Citation Citation
 Order printed copiesOrder

Article of the Year Award: Outstanding research contributions of 2020, as selected by our Chief Editors. Read the winning articles.