Table of Contents
VLSI Design
Volume 13, Issue 1-4, Pages 117-124

Monte Carlo Modeling of Wurtzite and 4H Phase Semiconducting Materials

1School of Electrical and Computer Engineering, Georgia Tech, Atlanta, GA, USA
2Dept. of Information Technology, Mid-Sweden University, Sundsvall, Sweden
3Dept. of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, USA

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [3 citations]

The following is the list of published articles that have cited the current article.

  • Youcef Belhadji, Benyounes Bouazza, and Ahmed Amine El-Ouchdi, “Electron transport characteristics in 4H-SIC polytype under high-electric-field,” 2017 5th International Conference on Electrical Engineering - Boumerdes (ICEE-B), pp. 1–4, . View at Publisher · View at Google Scholar
  • D. J. Goossens, “A Process for Modelling Diffuse Scattering from Disordered Molecular Crystals, Illustrated by Application to Monoclinic 9-Chloro-10-methylanthracene,” Advances in Condensed Matter Physics, vol. 2015, pp. 1–7, 2015. View at Publisher · View at Google Scholar
  • Poppy Siddiqua, and Stephen K. O'Leary, “The sensitivity of the electron transport within bulk zinc-blende gallium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley,” Journal of Applied Physics, vol. 120, no. 9, pp. 095701, 2016. View at Publisher · View at Google Scholar