Abstract
We present a discussion of the complexities encountered in particle simulation models for noncubic symmetry semiconductors, focusing on the wurtzite and 4H polytypes of GaN and SiC. We have identified three general issues, band structure, scattering mechanisms, and band intersections, which in our opinion, constitute the most important modifications to conventional Monte Carlo simulators for cubic symmetry semiconductors. It is found that the band intersection points present the greatest modeling challenge. We discuss the effect of band intersections on the transport dynamics and our initial attempts at treating transport near these points. Comparison to experimental data is also made.