Table of Contents
VLSI Design
Volume 13, Issue 1-4, Pages 131-134

An Analytic Expression of Thermal Diffusion Coefficient for the Hydrodynamic Simulation of Semiconductor Devices

1Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA 01003, USA
2lBM SRDC East Fishkill Facility, Hopewell Junction, NY 12533, USA
3Stanford University, Stanford, CA 94305, USA

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [3 citations]

The following is the list of published articles that have cited the current article.

  • M. Rousseau, J.D. Delemer, J.C. De Jaeger, and F. Dessenne, “Two-dimensional hydrodynamic model including inertia effects in carrier momentum for power millimetre-wave semi-conductor devices,” Solid-State Electronics, vol. 47, no. 8, pp. 1297–1309, 2003. View at Publisher · View at Google Scholar
  • T. Grasser, Ting-Wei Tang, H. Kosina, and S. Selberherr, “A review of hydrodynamic and energy-transport models for semiconductor device simulation,” Proceedings of the IEEE, vol. 91, no. 2, pp. 251–274, 2003. View at Publisher · View at Google Scholar
  • José M. Ruiz-Palmero, Urs Hammer, Heinz Jäckel, Honggang Liu, and C.R. Bolognesi, “Comparative technology assessment of future InP HBT ultrahigh-speed digital circuits,” Solid-State Electronics, vol. 51, no. 6, pp. 842–859, 2007. View at Publisher · View at Google Scholar