VLSI Design

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Computional Electronics; Papers Presented at The Seventh International Workshop on Computional Electronics

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Volume 13 |Article ID 054247 | https://doi.org/10.1155/2001/54247

M. Nedjalkov, H. Kosina, S. Selberherr, I. Dimov, "A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors", VLSI Design, vol. 13, Article ID 054247, 7 pages, 2001. https://doi.org/10.1155/2001/54247

A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors


A quantum-kinetic equation accounting for the electron-phonon interaction is solved by a stochastic approach. Analyzed are three analytically equivalent integral formulation of the equation which appear to have different numerical properties. Particularly the path-integral formulation is found to be advantageous for the numerical treatment. The analysis is supported by the presented simulation results. A variety of physical effects such as collisional broadening and collision retardation introduced by the equation are discussed.

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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