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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 405-411

A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors

1lnstitute for Microelectronics, TU-Vienna, Gusshausstrasse 27-29/E360, Wien A-1040, Australia
2CLPP, Bulgarian Academy of Sciences, Sofia, Bulgaria

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


A quantum-kinetic equation accounting for the electron-phonon interaction is solved by a stochastic approach. Analyzed are three analytically equivalent integral formulation of the equation which appear to have different numerical properties. Particularly the path-integral formulation is found to be advantageous for the numerical treatment. The analysis is supported by the presented simulation results. A variety of physical effects such as collisional broadening and collision retardation introduced by the equation are discussed.