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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 405-411

A Backward Monte Carlo Method for Simulation of the Electron Quantum Kinetics in Semiconductors

1lnstitute for Microelectronics, TU-Vienna, Gusshausstrasse 27-29/E360, Wien A-1040, Australia
2CLPP, Bulgarian Academy of Sciences, Sofia, Bulgaria

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [4 citations]

The following is the list of published articles that have cited the current article.

  • M. Nedjalkov, H. Kosina, S. Selberherr, C. Ringhofer, and D. Ferry, “Unified particle approach to Wigner-Boltzmann transport in small semiconductor devices,” Physical Review B, vol. 70, no. 11, 2004. View at Publisher · View at Google Scholar
  • Vassil Palankovski, and Siegfried Selberherr, “Rigorous modeling of high-speed semiconductor devices,” Microelectronics Reliability, vol. 44, no. 6, pp. 889–897, 2004. View at Publisher · View at Google Scholar
  • M. Nedjalkov, D. Vasileska, D. Ferry, C. Jacoboni, C. Ringhofer, I. Dimov, and V. Palankovski, “Wigner transport models of the electron-phonon kinetics in quantum wires,” Physical Review B, vol. 74, no. 3, 2006. View at Publisher · View at Google Scholar
  • Hans Kosina, “Wigner function approach to nano device simulation,” International Journal of Computational Science and Engineering, vol. 2, no. 3-4, pp. 100–118, 2006. View at Publisher · View at Google Scholar