VLSI Design

VLSI Design / 2001 / Article
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Computional Electronics; Papers Presented at The Seventh International Workshop on Computional Electronics

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Volume 13 |Article ID 062398 | https://doi.org/10.1155/2001/62398

A. Asenov, G. Slavcheva, S. Kaya, R. Balasubramaniam, "Quantum Corrections to the ‘Atomistic’ MOSFET Simulations", VLSI Design, vol. 13, Article ID 062398, 7 pages, 2001. https://doi.org/10.1155/2001/62398

Quantum Corrections to the ‘Atomistic’ MOSFET Simulations

Abstract

We have introduced in a simple and efficient manner quantum mechanical corrections in our 3D ’atomistic’ MOSFET simulator using the density gradient formalism. We have studied in comparison with classical simulations the effect of the quantum mechanical corrections on the simulation of random dopant induced threshold voltage fluctuations, the effect of the single charge trapping on interface states and the effect of the oxide thickness fluctuations in decanano MOSFETs with ultrathin gate oxides. The introduction of quantum corrections enhances the threshold voltage fluctuations but does not affect significantly the amplitude of the random telegraph noise associated with single carrier trapping. The importance of the quantum corrections for proper simulation of oxide thickness fluctuation effects has also been demonstrated.

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


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