Table of Contents Author Guidelines Submit a Manuscript
VLSI Design
Volume 13, Issue 1-4, Pages 189-192
http://dx.doi.org/10.1155/2001/71879

Analytic I–V Model for Single-Electron Transistors

Center for Nano Science and Technology, Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, India

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [6 citations]

The following is the list of published articles that have cited the current article.

  • C. Gerousis, S.M. Goodnick, and W. Porod, “Toward nanoelectronic cellular neural networks,” International Journal of Circuit Theory and Applications, vol. 28, no. 6, pp. 523–535, 2000. View at Publisher · View at Google Scholar
  • Abann Sunny, S. Aiswariya, A.J. Rose, Jerrin Joseph, Mangal Jolly, and Vinod Pangracious, “Design & implementation of configurable logic block (CLB) using SET based QCA technology,” ICSICT 2012 - 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, 2012. View at Publisher · View at Google Scholar
  • Abann Sunny, S. Aiswariya, A.J. Rose, Jerrin Joseph, Mangal Jolly, and Vinod Pangracious, “Design & implementation of configurable logic block (CLB) using SET based QCA technology,” 2012 Annual IEEE India Conference, INDICON 2012, pp. 137–142, 2012. View at Publisher · View at Google Scholar
  • L. Sheela, N. B. Balamurugan, S. Sudha, and J. Jasmine, “Analysis of Tunnelling Rate Effect on Single Electron Transistor,” Journal of Electrical Engineering & Technology, vol. 9, no. 5, pp. 1670–1676, 2014. View at Publisher · View at Google Scholar
  • Duy Manh Luong, and Kazuhiko Honjo, “Power gain improvement for single-electron transistors,” Japanese Journal of Applied Physics, vol. 53, no. 4S, pp. 04EJ03, 2014. View at Publisher · View at Google Scholar
  • A. Nasri, A. Boubaker, W. Khaldi, B. Hafsi, and A. Kalboussi, “Single electron transistor: Energy-level broadening effect and thermionic contribution,” Semiconductors, vol. 51, no. 12, pp. 1656–1660, 2017. View at Publisher · View at Google Scholar