Abstract
It has been known for many years that interface roughness scattering, particularly off the Si/SiO2 interface, is a limiting factor in device performance of MOSFETs. This becomes increasingly important as gate lengths are shrunk to decanano dimensions along with the move towards SiGe hetero-technology. However, analysis of interface transport is hampered by the lack of detailed physical models, especially for surfaces where intercalation occurs. This paper presents an efficient method for following the motion of wave-packets scattering off a rough interface. We are also able to calculated directly ab-initio interface scattering rates for use in Monte Carlo simulations.