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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 199-204

A Fast Algorithm for the Study of Wave-packet Scattering at Disordered Interfaces

Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8LT, Scotland

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


It has been known for many years that interface roughness scattering, particularly off the Si/SiO2 interface, is a limiting factor in device performance of MOSFETs. This becomes increasingly important as gate lengths are shrunk to decanano dimensions along with the move towards SiGe hetero-technology. However, analysis of interface transport is hampered by the lack of detailed physical models, especially for surfaces where intercalation occurs. This paper presents an efficient method for following the motion of wave-packets scattering off a rough interface. We are also able to calculated directly ab-initio interface scattering rates for use in Monte Carlo simulations.