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VLSI Design
Volume 13, Issue 1-4, Pages 199-204
http://dx.doi.org/10.1155/2001/75462

A Fast Algorithm for the Study of Wave-packet Scattering at Disordered Interfaces

Nanoelectronics Research Centre, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8LT, Scotland

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [2 citations]

The following is the list of published articles that have cited the current article.

  • Liandeng Yang, J.R. Watling, F. Adam-Lema, A. Asenov, and J.R. Barker, “Scaling study of Si and strained Si n-MOSFETs with different high-κ gate stacks,” IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004., pp. 597–600, . View at Publisher · View at Google Scholar
  • John R. Barker, and Jeremy R. Watling, “Traversal times and charge confinement for spatially dependent effective masses within semiconductor heterostructures: the quantum potential approach,” Microelectronic Engineering, vol. 63, no. 1-3, pp. 97–103, 2002. View at Publisher · View at Google Scholar