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VLSI Design
Volume 12 (2001), Issue 4, Pages 501-513
http://dx.doi.org/10.1155/2001/79703

Effect of Reverse Body Bias on Current Testing of 0.18 μm Gates

Electrical Engineering Department, Santa Clara University, 500 El Camino Real, Santa Clara 95053-0583, CA, USA

Received 15 August 1999; Revised 11 September 2000

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Xiaomei Liu, Prachi Sathe, and Samiha Mourad, “Effect of Reverse Body Bias on Current Testing of 0.18 μm Gates,” VLSI Design, vol. 12, no. 4, pp. 501-513, 2001. doi:10.1155/2001/79703