Langevin Forces and Generalized Transfer Fields for
Noise Modelling in Deep Submicron Devices

Shiktorov, P.; Starikov, E.; Gruzinskis, V.; GonzáLez, T.; Mateos, J.; Pardo, D.; Reggiani, L.; Varani, L.; Vaissiére, J. C.

doi:https://doi.org/10.1155/2001/82542

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Computional Electronics; Papers Presented at The Seventh International Workshop on Computional Electronics

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Volume 13 | Article ID 082542 | https://doi.org/10.1155/2001/82542

Langevin Forces and Generalized Transfer Fields for Noise Modelling in Deep Submicron Devices

P. Shiktorov,^1,5E. Starikov,^1,4V. Gruzinskis,¹T. GonzáLez,²J. Mateos,²D. Pardo,²L. Reggiani,³L. Varani,⁴and J. C. Vaissiére⁴

Abstract

We present a generalized transfer field method with the microscopic noise sources directly connected with the velocity and energy change during single scattering events. The advantages of this method are illustrated by hydrodynamic calculations of current and voltage noise spectra in several two-terminal submicron structures.

Copyright

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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