Computional Electronics; Papers Presented at The Seventh International Workshop on Computional ElectronicsView this Special Issue
P. Shiktorov, E. Starikov, V. Gruzinskis, T. GonzáLez, J. Mateos, D. Pardo, L. Reggiani, L. Varani, J. C. Vaissiére, "Langevin Forces and Generalized Transfer Fields for Noise Modelling in Deep Submicron Devices", VLSI Design, vol. 13, Article ID 082542, 6 pages, 2001. https://doi.org/10.1155/2001/82542
Langevin Forces and Generalized Transfer Fields for Noise Modelling in Deep Submicron Devices
We present a generalized transfer field method with the microscopic noise sources directly connected with the velocity and energy change during single scattering events. The advantages of this method are illustrated by hydrodynamic calculations of current and voltage noise spectra in several two-terminal submicron structures.
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