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VLSI Design
Volume 13, Issue 1-4, Pages 381-386
http://dx.doi.org/10.1155/2001/89617

Maximum Entropy Principle within A Total Energy Scheme for Hot-carrier Transport in Semiconductor Devices

1Dipartimento di Maternatica, Universitá di Catania, viale A. Doria, Catania 6-95125, Italy
2Dipartimento di Ingegneria dell' Innovazione ed INFM, Universitá di Lecce, Via Arnesano s/n, Lecce 73100, Italy

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [2 citations]

The following is the list of published articles that have cited the current article.

  • M.H. El-Saba, “Investigation about the hot-carrier repelling effect in semiconductor devices, using an analytical solution of the hydrodynamic model,” IEEE Transactions on Electron Devices, vol. 53, no. 7, pp. 1615–1622, 2006. View at Publisher · View at Google Scholar
  • M. Trovato, and L. Reggiani, “Maximum-entropy principle for static and dynamic high-field transport in semiconductors,” Physical Review B, vol. 73, no. 24, 2006. View at Publisher · View at Google Scholar