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VLSI Design
Volume 13 (2001), Issue 1-4, Pages 399-404

An lonised-impurity Scattering Model for 3D Monte Carlo Device Simulation with Discrete Impurity Distribution

1lnstitut d'Electronique Fondamentale, CNRS UMR 8622, Université Paris-Sud, Bâtiment 220, Orsay cedex F-91405, France
2Dpto. De Fisica Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, Salamanca 37008, Spain

Copyright © 2001 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


An improved 3-D Monte Carlo simulation model is developed to treat the discrete random dopant distribution in sub-0.1 μm MOSFET. The new atomistic model is based on a scattering rate calculation and an algorithm that take into account many-body effects and the local variations of screening length according to impurity distribution and bias conditions.

To validate this new approach low field electron drift mobility and diffusion coefficient have been computed using simulation of 3D bars for 1015–1018 cm–3 range of average doping concentration. A good agreement is found between calculation and experimental mobility data at 300 K.