An lonised-impurity Scattering Model for 3D Monte Carlo Device Simulation with Discrete Impurity Distribution

Abstract

An improved 3-D Monte Carlo simulation model is developed to treat the discrete random dopant distribution in sub-0.1 μm MOSFET. The new atomistic model is based on a scattering rate calculation and an algorithm that take into account many-body effects and the local variations of screening length according to impurity distribution and bias conditions.To validate this new approach low field electron drift mobility and diffusion coefficient have been computed using simulation of 3D bars for 10¹⁵–10¹⁸ cm^–3 range of average doping concentration. A good agreement is found between calculation and experimental mobility data at 300 K.