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VLSI Design
Volume 15 (2002), Issue 4, Pages 751-759

Integration of the Density Gradient Model into a General Purpose Device Simulator

1ISE Integrated Systems Engineering AG, Balgriststrasse 102, Zürich 8008, Switzerland
2ISE Integrated Systems Engineering, Inc., 111 N. Market Street, San Jose, CA 95113, USA

Received 18 June 2001

Copyright © 2002 Hindawi Publishing Corporation. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [6 citations]

The following is the list of published articles that have cited the current article.

  • C.D. Nguyen, A.T. Pham, C. Jungemann, and B. Meinerzhagen, “Study of charge carrier quantization in strained Si-nMOSFETs,” Materials Science in Semiconductor Processing, vol. 8, no. 1-3, pp. 363–366, 2005. View at Publisher · View at Google Scholar
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  • Yu-Sheng Wu, Ming-Long Fan, and Pin Su, “Investigation of Switching-Time Variations for Nanoscale MOSFETs Using the Effective-Drive-Current Approach,” IEEE Electron Device Letters, vol. 31, no. 2, pp. 162–164, 2010. View at Publisher · View at Google Scholar
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