A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

<table>Designing two different XOR gates with six transistors (The figure selected from [<a href="/journals/vlsi/2009/803974/#B9">9</a>]).</table>

VLSI Design

Figure 1: A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor 