VLSI Design

VLSI Design / 2009 / Article / Fig 5

Research Article

A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

Figure 5

(a) Interior design circuit for modeling RTHEMT. The HEMT characteristics are: Level = 2, , , and . The RTD characteristics are: P/V ratio of at room temperature, the peak current density is and the area is 0.145  m2. (b) Solid line and dotted lines show a RTD and a FET I-V characteristic respectively. At certain the RTD curve intersects with the saturation FET curve in only one point (point A) which results in the flat current.
803974.fig.005a
(a)
803974.fig.005b
(b)

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