VLSI Design

VLSI Design / 2009 / Article / Fig 6

Research Article

A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

Figure 6

The new two-input XOR gate based on RTHEMT. The RTHEMT charactrestics are the same as Figure 5(a) and the FET characteristic are: SPICE model with and .
803974.fig.006

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