A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

Figure 6

The new two-input XOR gate based on RTHEMT. The RTHEMT charactrestics are the same as Figure 5(a) and the FET characteristic are: Level=3 SPICE model with 𝐾𝑝=406𝑒−6 and 𝑉_TO=−1.6V.