VLSI Design

VLSI Design / 2009 / Article / Fig 7

Research Article

A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

Figure 7

Solid line shows the new RTHEMT characteristics (by employing 90 nm technology) and two other lines show two load lines with slopes which are tangent to the minimum and the maximum of the RTHEMT curve. The load lines between A and B lines lead to memory behavior and are invalid.

We are committed to sharing findings related to COVID-19 as quickly and safely as possible. Any author submitting a COVID-19 paper should notify us at help@hindawi.com to ensure their research is fast-tracked and made available on a preprint server as soon as possible. We will be providing unlimited waivers of publication charges for accepted articles related to COVID-19. Sign up here as a reviewer to help fast-track new submissions.