VLSI Design

VLSI Design / 2009 / Article / Fig 7

Research Article

A New XOR Structure Based on Resonant-Tunneling High Electron Mobility Transistor

Figure 7

Solid line shows the new RTHEMT characteristics (by employing 90 nm technology) and two other lines show two load lines with slopes which are tangent to the minimum and the maximum of the RTHEMT curve. The load lines between A and B lines lead to memory behavior and are invalid.
803974.fig.007

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